Deposited carbon film on etched silicon for on-chip supercapacitor
US12033796B2 · kind B2 · utility
0Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2018 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Mar 7, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An on-chip supercapacitor constituted by a silicon substrate and a porous carbon layer positioned thereon, the carbon layer including pseudocapacitive materials. The invention also relates to the method for producing the supercapacitor and the porous material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.