Capacitor structure and manufacturing method thereof
US12033799B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 21, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Feb 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/33
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for capacitor structure includes: forming a dielectric layer on a first electrode, wherein the dielectric layer includes metal oxide layers doped with preset oxides, and part of the preset oxide and a metal oxide share oxygen atoms; and forming a second electrode on the dielectric layer, wherein the first electrode, the dielectric layer and the second electrode constitute a capacitor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.