Patent · US Active

CVD preparation method for minimizing camera module dot defects and product thereof

US12034020B2 · kind B2 · utility

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6Claims
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Key dates

Filing dateMay 15, 2020
Grant dateJul 9, 2024
Priority date
Expiry dateFeb 10, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/014
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A CVD preparation method for minimizing camera module dot defects includes: performing ultrasonic cleaning and drying on a base substrate to obtain a pre-treated base substrate; placing the pre-treated base substrate into a reaction chamber, evacuating, and introducing nitrogen or inert gas to slightly positive pressure; simultaneously introducing precursor I and precursor II at a temperature of 500-700° C. to deposit a low-refractive-index L layer on the base substrate; halting introduction of the precursor I and the precursor II, and purging the reaction chamber with nitrogen or the inert gas; introducing raw gas precursor III and precursor IV at a temperature of 600-800° C. to deposit a high-refractive-index H layer on the low-refractive-index L layer; and halting introduction of the precursor III and precursor IV, and purging the reaction chamber with nitrogen or inert gas; and cooling to room temperature to obtain an optical element with coating films having different refractive indices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.