Micro LED device and method of manufacturing the same
US12034032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2023 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.