Semiconductor device and semiconductor apparatus including the same
US12034036B2 · kind B2 · utility
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3References
26Claims
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Key dates
| Filing date | May 28, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Jan 13, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.