Optoelectronic component having a dielectric reflective layer and production method for same

US12034098B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Andreas Leber · Regensburg, DE
• Siegfried Herrmann · Neukirchen, DE
• Christine Rafael · Donaustauf, DE

Key dates

• Filing date: Sep 26, 2019
• Grant date: Jul 9, 2024
• Expiry date: Jun 20, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8506

Abstract

An optoelectronic device includes an optoelectronic semiconductor chip having a first and a second semiconductor layer having a first and second conductivity type, respectively; a first and a second current spreading layer; a dielectric reflective layer; and a plurality of first electrical connecting elements. The first semiconductor layer and the second semiconductor layer are stacked. The first current spreading layer and the second current spreading layer are arranged on a side of the first semiconductor layer facing away from the second semiconductor layer. The dielectric reflective layer is arranged between the first semiconductor layer and the first current spreading layer. The plurality of first electrical connecting elements extends through the dielectric reflective layer and is suitable to electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer is electrically connected to the second semiconductor layer.