Patent · US Active

Optoelectronic semiconductor device with first and second optoelectronic elements

US12034271B2 · kind B2 · utility

0Cited by
2References
19Claims
0Family size

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Inventors

Key dates

Filing dateJul 23, 2019
Grant dateJul 9, 2024
Priority date
Expiry dateSep 3, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F77/40
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An optoelectronic semiconductor device may include a first array of first optoelectronic components and a second array of second optoelectronic components arranged in a substrate. The first optoelectronic components may each include a first resonator mirror and a second resonator mirror where the first resonator mirror has a first main surface and an active area suitable for generating radiation. Each resonator mirror is arranged one above the other along a first direction where radiation emitted by the optoelectronic component is emitted via the first main surface. The first optoelectronic components are suitable for emitting electromagnetic radiation. The second optoelectronic components may each include an active area suitable for generating radiation and are suitable for absorbing electromagnetic radiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.