High power, double-sided thin film filter
US12034425B2 · kind B2 · utility
0Cited by
18References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Oct 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2001/0085
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high power thin film filter is disclosed includes a substrate having a substrate thickness in a Z-direction between a first surface and a second surface. A thin film capacitor may be formed over the first surface. A thin film inductor may be spaced apart from the thin film capacitor by at least the thickness of the substrate. A via may be formed in the substrate that electrically connects the thin film capacitor and the thin film inductor. The via may include a polymeric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.