Magnetic memory and reading/writing method thereof
US12035539B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2021 |
| Grant date | Jul 9, 2024 |
| Priority date | — |
| Expiry date | Jul 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present application provides a magnetic memory and a reading/writing method thereof. The magnetic memory includes at least one cell layer, the cell layer including: a plurality of paralleled first conductors located in a first plane; a plurality of paralleled second conductors located in a second plane, the first plane being parallel to the second plane, a projection of the second conductor on the first plane intersecting with the first conductor; a plurality of memory elements arranged between the first plane and the second plane, the memory element including a magnetic tunnel junction and a bidirectional gating device arranged in series along a direction perpendicular to the first plane, the magnetic tunnel junction being connected to the first conductor, the bidirectional gating device being connected to the second conductor, and the bidirectional gating device being configured to be turned on when a threshold voltage and/or a threshold current are/is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.