Doped perovskite barium stannate material with preparation method and application thereof
US12037290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Mar 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/1218
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed herein is a doped perovskite barium stannate material, which has a chemical general formula of BaAxBxSn1-2xO3, where A is at least one of In, Y, Bi and La; B is at least one of Nb and Ta, and 0<x≤0.025. The doped perovskite barium stannate material disclosed in the invention has a high dielectric constant, low dielectric loss and good temperature-stability, and it can be used not only as low-frequency ceramic capacitor dielectrics, but also as microwave dielectric ceramics because of its excellent microwave dielectric properties, implying the potential application in the field of microwave communication. What's more, disclosed is a method to prepare the doped perovskite barium stannate material and the application of the doped perovskite barium stannate material in a low-frequency ceramic capacitor or microwave communication dielectric ceramics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.