Semiconductor device including TSV and multiple insulating layers
US12040231B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | May 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, an interlayer insulating layer covering an upper surface of the substrate, an individual device in the interlayer insulating layer, a lower insulating layer covering a lower surface of the substrate, a through-silicon-via (TSV) structure extending through the substrate, the interlayer insulating layer and the lower insulating layer, a conductive pad connected to an upper end of the TSV structure, a via insulating layer surrounding the TSV structure, a capping insulating layer surrounding the TSV structure outside the via insulating layer. The via insulating layer and the capping insulating layer have an air gap therebetween. A portion of the air gap extends into the lower insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.