Package structure for semiconductor device and preparation method thereof
US12040241B2 · kind B2 · utility
0Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO2 film, a Si3N4 film and a second SiO2 film stacked in this order, wherein the first SiO2 film is formed by a thermal oxidation process, the Si3N4 film is formed by a low pressure chemical vapor deposition process, and the second SiO2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.