Thin film resistor (TFR) device structure for high performance radio frequency (RF) filter design
US12040268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2022 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jan 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit (IC) includes a substrate and a thin film resistor (TFR) device structure. The TFR device structure includes a first portion of a first metallization layer and a second portion of the first metallization layer on the substrate. The TFR device structure also includes a first portion of a dielectric layer on the first portion of the first metallization layer and a second portion of the dielectric layer on the second portion of the first metallization layer. The TFR device structure further includes a first portion of a second metallization layer on the first portion of the dielectric layer and a second portion of the second metallization layer on the second portion of the dielectric layer. The TFR device structure also includes a first portion of a third metallization layer coupling the first portion of the second metallization layer to the second portion of the second metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.