Semiconductor device with active pattern including a transition pattern and method for fabricating the same
US12040324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Mar 23, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device including a substrate including first and second regions along a first direction, and a third region between the first region and the second region, an active pattern extending in the first direction, on the substrate, and first to third gate electrodes spaced apart from each other and extending in a second direction, on the active pattern, the active pattern of the first region including first semiconductor patterns spaced apart from each other and penetrating the first gate electrode, the active pattern of the second region including second semiconductor patterns spaced apart from each other and penetrating the second gate electrode, the active pattern of the third region including a transition pattern protruding from the substrate and intersecting the third gate electrode and including a sacrificial pattern and a third semiconductor pattern alternately stacked on the third region and including different materials from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.