Backside illuminated image sensor and manufacturing method therefore
US12040343B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Aug 27, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Aug 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.