Light emitting diode devices with patterned TCO layer including different thicknesses
US12040432B2 · kind B2 · utility
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41References
21Claims
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Key dates
| Filing date | Mar 5, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Jul 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. A patterned transparent conductive oxide layer is on the top surface of the mesa. The patterned transparent conductive oxide layer has a first portion with a first thickness and a second portion with a second thickness, the second thickness less than the first thickness. Optical loss of the LED is reduced in the thinned region of the transparent conductive oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.