Semiconductor laser and method for producing a semiconductor laser
US12040588B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 11, 2019 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Aug 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0071
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In one embodiment, the semiconductor laser comprises a housing in which multiple laser diode chips are encapsulated. The housing comprises a cover panel and/or a lateral wall which is permeable to the generated laser radiation. The cover panel and/or the lateral wall has a light outlet surface with adjacent outlet regions. Each of the outlet regions is paired with precisely one of the laser diode chips. The light outlet surface is arranged downstream of a light outlet plane. The cover panel and/or the lateral wall has a different average thickness in the outlet regions such that the optical wavelength for the laser radiation of all of the laser diode chips is the same up to the light outlet plane with a tolerance of maximally 1.5 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.