Semiconductor lasers with improved frequency modulation response
US12040597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Nov 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/163
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser comprising a single mode laser cavity having a stack of semiconducting layers defining a transversal p-n junction is provided. A plurality of electrodes are coupled to corresponding sections of the laser cavity along the longitudinal light propagation direction, each corresponding section defining one of an amplification section or a modulation section. One or more DC sources are coupled to the electrodes associated with the amplification sections to forward-bias the p-n junction above transparency, so as to provide gain in the associated amplification sections. One or more modulation signal sources are coupled to the electrodes associated with the modulation sections, and apply a modulation signal across the p-n junction below transparency, the modulation signal providing a modulation of an output optical frequency of the semiconductor laser. Each modulation section is operated in photovoltaic mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.