Method for manufacturing active matrix substrate, and active matrix substrate
US12041820B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2018 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Aug 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.