Magnetic tunnel junction device, magnetic memory using the same and method for manufacturing the same
US12041854B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Jul 16, 2024 |
| Priority date | — |
| Expiry date | Mar 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed art a magnetic tunnel junction device, a magnetic memory using the same, and a method for manufacturing the same. The method for manufacturing the magnetic tunnel junction device may include the steps of a lamination step of forming an initial multilayer structure including at least one metallic oxide layer and a metallic layer on a substrate; a heat treatment step of heat-treating the initial multilayer structure; and a device forming step of forming a magnetic tunnel junction device of a final multilayer structure in which at least one metallic oxide layer and the metallic layer are converted to at least one ferromagnetic material layer and the oxide layer by heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.