Patent · US Active

Multilayer integrated photonic structure

US12044882B2 · kind B2 · utility

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1References
22Claims
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Assignee

Inventor

Key dates

Filing dateDec 19, 2022
Grant dateJul 23, 2024
Priority date
Expiry dateDec 19, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2203/24
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Example embodiments relate to multilayer integrated photonic structures. An example multilayer integrated photonic structure includes a propagation region formed in a first photonic layer. The propagation region includes a plurality of waveguides and a slab region in which the plurality of waveguides terminates. The multilayer integrated photonic structure also includes an outcoupling structure formed in a second photonic layer on top of the first photonic layer. The outcoupling structure is configured to couple light into and out of the multilayer integrated photonic structure. Additionally, the multilayer integrated photonic structure includes a reflector configured to optically couple the slab region of the first photonic layer and the second photonic layer. The reflector includes a first reflector element included in the slab region of the first photonic layer and a second reflector element included in the second photonic layer. The first and second reflector element are in optical communication with each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.