Photoresist for semiconductor fabrication
US12044966B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jul 20, 2023 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jul 20, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2004
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.