Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same
US12045470B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2023 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Jul 3, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each of a plurality of memory blocks of a nonvolatile memory device is divided into two or more wordline groups having different characteristics. A write command for at least two memory blocks among the plurality of memory blocks is received. During a first partial time interval included in an entire write time interval for two or more memory blocks, a data write operation is performed on a wordline group included in one memory block among the two or more memory blocks in response to a reception of an address for the one memory block. During a second other partial time interval included in the entire write time interval, a data write operation is performed on wordline groups included in the two or more memory blocks in response to a reception of an address for the two or more memory blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.