Patent · US Active

System and method for selective static random-access memory partition initialization

US12046275B2 · kind B2 · utility

0Cited by

1References

22Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Ruchi Shankar · Bengaluru, IN
Shobhit Singhal · Bengaluru, IN
Sverre Brubæk · Oslo, NO
Praveen Kumar Narayanan · Kanchinakote, IN

Key dates

Filing date	Dec 21, 2021
Grant date	Jul 23, 2024
Priority date	—
Expiry date	Jun 25, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/418
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A static random-access memory (SRAM) includes a SRAM cell module, comprising a plurality of SRAM cell partitions, and an initialization register, containing data configured to control initialization of at least some of the plurality of partitions during an initialization phase. The SRAM also includes a control module coupled with the SRAM cell module and the initialization register, configured to read the initialization register during the initialization phase, and to selectively initialize a portion of the plurality of SRAM cell partitions, based at least in part on the data contained within the initialization register.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.