Semiconductor structure and manufacturing method thereof
US12046280B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2022 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Nov 8, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8613
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a transistor; a first phase change memory structure, a bottom electrode of the first phase change memory structure being electrically connected to a first terminal (source or drain) of the transistor; a second phase change memory structure, a top electrode of the second phase change memory structure being electrically connected to the first terminal of the transistor; a first bit line, electrically connected to a top electrode of the first phase change memory structure; and a second bit line, electrically connected to a bottom electrode of the second phase change memory structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.