Electrostatic puck and method of manufacture
US12046502B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2019 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Oct 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B3/283
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of constructing an E-puck includes forming at least one trench into a lower substrate, depositing an electrode material onto the lower substrate and into the at least one trench, removing excess electrode material from the lower substrate to leave the electrode material within the at least one trench to form an electrode, and forming a dielectric on the lower substrate and the electrode. The electrode is between the lower substrate and the upper substrate. Forming the at least one trench into the lower substrate forms at least one standoff portion adjacent to the at least one trench and the at least one standoff portion reduces dishing of the electrode material during removal of the excess electrode material from the lower substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.