Three dimensional MIM capacitor having a comb structure and methods of making the same
US12046550B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 13, 2023 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Feb 13, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal-insulator-metal (MIM) capacitor, an integrated semiconductor device having a MIM capacitor and methods of making. The MIM capacitor includes a first metal layer, a second metal layer and a dielectric layer located between the second metal layer and the first metal layer. The first metal layer, the second metal layer and the dielectric layer may be formed in a comb structure, wherein the comb structure include a first tine structure and at least a second tine structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.