Image sensor and method of fabricating the same
US12046617B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Oct 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.