Compound semiconductor x-ray detector tiles and method of dicing thereof
US12046623B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Aug 6, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Sep 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/028
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from <110> in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.