Manufacturing method of semiconductor structure and semiconductor structure
US12046630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
Abstract
The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure, and relates to the technical field of semiconductors. The manufacturing method includes: providing a base, wherein the base is provided with an active region; forming a gate layer on the base; forming isolation structures on a periphery of the gate layer, wherein in a direction away from the gate layer, each of the isolation structures at least includes a hollow portion and an isolation portion; forming an insulating structure on top surfaces of the isolation structures; forming contact plugs, wherein the contact plugs penetrate the insulating structure; an end of each of the contact plugs close to the base is electrically connected to the active region; each of the contact plugs is located on a side of each of the isolation structures away from the gate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.