Nanorod light emitting device and method of manufacturing the same
US12046700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2023 |
| Grant date | Jul 23, 2024 |
| Priority date | — |
| Expiry date | Aug 25, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a nanorod light-emitting device including a first semiconductor layer doped with a first conductive type impurity, an emission layer disposed above the first semiconductor layer, a second semiconductor layer disposed above the emission layer and doped with a second conductive type impurity that is electrically opposite to the first conductive type impurity, a conductive layer disposed between at least one of a center portion of a lower surface of the emission layer and the first semiconductor layer and a center portion of an upper surface of the emission layer and the second semiconductor layer, and a current blocking layer surrounding a sidewall of the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.