Patent · US Active

Etch stop and protection layer for capacitor processing in electroacoustic devices

US12047744B2 · kind B2 · utility

0Cited by

9References

30Claims

0Family size

Assignee

RF360 Singapore Pte. Ltd. · SG

Inventors

Stephan Pohlner · Birkenfeld, DE
Christoph Eggs · Rattenkirchen, DE
Stefan Freisleben · Neubiberg, DE
Matthias Jungkunz · Birkenfeld, DE
Thomas Telgmann · Hersbruck, DE
Marc Esquius Morote · Munich, DE
Ilya LUKASHOV · Munich, DE
Marcel Giesen · Munich, DE

Key dates

Filing date	Apr 26, 2021
Grant date	Jul 23, 2024
Priority date	—
Expiry date	Aug 30, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/714
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.