Patent · US Active

Hard mask and preparation method thereof, preparation method of josephson junction, and superconducting circuit

US12048255B2 · kind B2 · utility

0Cited by

3References

10Claims

0Family size

Assignee

Alibaba Group Holding Limited · KY

Inventors

Ran Gao · Erlangen, DE
Jingwei Zhou · Shanghai, CN
Chunqing Deng · Hangzhou City, CN

Key dates

Filing date	Feb 22, 2023
Grant date	Jul 23, 2024
Priority date	—
Expiry date	Feb 22, 2043

Classification

Technology area (CPC H)Electricity
CPC primaryH10N69/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A hard mask includes a silicon oxide layer provided on a bare silicon wafer; and a silicon nitride layer provided on the silicon oxide layer, wherein the silicon nitride is provided with a first pattern, the silicon oxide layer is provided with a second pattern corresponding to the first pattern, the first pattern and the second pattern have different shapes, and the first pattern and the second pattern are configured to assist in forming a Josephson junction on the bare silicon wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.