Methods to improve the quantum yield of indium phosphide quantum dots
US12049582B2 · kind B2 · utility
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Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Aug 19, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/36
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures using in situ prepared zinc dioleate and/or a metal halide. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.