Patent · US Active

Resistive electrodes on ferroelectric devices for linear piezoelectric programming

US12051474B2 · kind B2 · utility

0Cited by

8References

22Claims

0Family size

Assignee

Cornell University · IT

Inventors

Amit Lal · Ithaca, US
Shubham Jadhav · Ithaca, US
Ved Gund · Ithaca, US
Benyamin Davaji · Ithaca, US
Grace Huili Xing · Ithaca, US
Debdeep Jena · Ithaca, US

Key dates

Filing date	Aug 23, 2022
Grant date	Jul 30, 2024
Priority date	—
Expiry date	Feb 3, 2043

Classification

Technology area (CPC G)Physics
CPC primaryG06N3/063
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Disclosed are ferroelectric devices including devices for performing a multiplication of analog input signals and resonators. In one aspect, a ferroelectric nanoelectromechanical device includes a first structural beam, a first input electrode disposed on a first top portion of the first structural beam, and an output electrode. The apparatus further includes a first ferroelectric film disposed on a second top portion of the first input electrode, and a first resistive layer disposed on a third top portion of the first ferroelectric film, wherein a first electrode is positioned at a first end of the first resistive layer and a second electrode is positioned at a second end of the first resistive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.