Planar and non-planar FET-based electrostatic discharge protection devices
US12051691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2020 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Dec 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.