Integrated circuit structure with front side signal lines and backside power delivery
US12051692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Dec 3, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit structures having front side signal lines and backside power delivery are described. In an example, an integrated circuit structure includes a plurality of gate lines extending over a plurality of semiconductor nanowire stack or fin channel structures within a cell boundary. A plurality of trench contacts is extending over a plurality of source or drain structures within the cell boundary, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A first signal line, a second signal line, a third signal line, and a fourth signal line are over the plurality of gate lines and the plurality of trench contacts within the cell boundary. A backside power delivery line is coupled to one of the plurality of trench contacts within the cell boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.