Pixel with an improved quantum efficiency
US12051705B2 · kind B2 · utility
0Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Sep 9, 2021 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | May 19, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.