Close butted collocated variable technology imaging arrays on a single ROIC
US12051712B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | May 15, 2023 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | May 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/92242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.