Anti-ferroelectric thin-film structure and electronic device including the same
US12051717B2 · kind B2 · utility
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27Claims
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Key dates
| Filing date | Mar 23, 2022 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Aug 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/033
Abstract
An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.