Semiconductor schottky rectifier device
US12051728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2023 |
| Grant date | Jul 30, 2024 |
| Priority date | — |
| Expiry date | Jun 14, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor Schottky rectifier device includes providing a semiconductor substrate, forming a hard mask for trench etch including openings for guard rings, an anode region, and a cathode region, and etching semiconductor epitaxial material layer to form a plurality of trenches. The method also includes forming a first dielectric layer and depositing a polysilicon layer, performing an anisotropic etch of the polysilicon layer to form polysilicon elements on sidewalls of the trench, and depositing and etching a second dielectric layer to expose a Schottky diode region and a bottom region of the trench in the cathode region. The method further includes depositing a first metal layer and performing a thermal treatment to form metal silicide in the Schottky diode region and the cathode region and forming a second metal layer and separating the second metal layer into an anode electrode and a cathode electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.