Semiconductor device and fabrication method thereof

US12051737B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventor

• Nan Wang · Shanghai, CN

Key dates

• Filing date: Aug 27, 2021
• Grant date: Jul 30, 2024
• Expiry date: Jul 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Semiconductor device and fabrication method are provided by providing initial fins discretely arranged on a substrate; forming an isolation structure on the substrate; forming a connecting layer on sidewalls of the initial fins and between adjacent initial fins; forming a dummy gate structure across the initial fins and the connecting layer on the substrate, covering sidewalls of the connecting layer and a portion of a top surface of the initial fins; forming grooves in the initial fins on both sides of the dummy gate structure, and forming source and drain doped layers in the grooves; forming a dielectric layer on the substrate, covering sidewalls of the dummy gate structure and the source and drain doped layers, that a top surface of the dielectric layer is flush with a top surface of the dummy gate structure; and removing the dummy gate structure to form a gate structure.