Semiconductor device and semiconductor component including the same preliminary class

US12051767B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Yen-Chun Tseng · Banluliao, TW
• Kuo-Feng Huang
• Shih-Chang Lee
• Ming-Ta Chin · Hsinchu, TW
• Shih-Nan Yen · Hsinchu, TW
• Cheng-Hsing Chiang · Hsinchu, TW
• Chia-Hung Lin · Xishizhuang, TW
• Cheng-Long Yeh · Hsinchu, TW
• Yi-Ching Lee · Hsinchu, TW
• Jui-Che Sung · Hsinchu, TW
• Shih-Hao Cheng · Hsinchu, TW

Key dates

• Filing date: Jan 20, 2023
• Grant date: Jul 30, 2024
• Expiry date: Jan 20, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.