Patent · US Active

Semiconductor module and method for producing same

US12052878B2 · kind B2 · utility

0Cited by

1References

12Claims

0Family size

Assignee

ASCA GmbH · DE

Inventors

Ralph Pätzold · Roth, DE
Pavel Schilinsky · Bremen, DE
Bas Cedric Van Der Wiel · Nuremberg, DE

Key dates

Filing date	Dec 21, 2021
Grant date	Jul 30, 2024
Priority date	—
Expiry date	Dec 21, 2041

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/549
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A semiconductor module has a layer structure and at least one capacitive sensor. The layer structure is formed with an upper electrode layer, a lower electrode layer, and an active layer arranged between the electrode layers. The active layer is made of a semiconductor material. The capacitive sensor has a measuring electrode which is integrated into the layer structure. There is also described a device which has such a semiconductor module and a method for producing such a semiconductor module.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.