Semiconductor device having porous region embedded structure and method of manufacture thereof
US12054838B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Oct 20, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Jan 18, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device that includes a porous anodic region for embedding a structure. The porous anodic region is defined by a ductile hard mask. The ductility of the hard mask reduces the potential for the hard mask to crack during the formation by anodization of the porous anodic region. The ductile hard mask may be a metal. The metal may be selected to form a stable oxide when exposed to the anodization electrolyte thereby enabling the hard mask to self-repair if a crack occurs during the anodization process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.