Apparatus and method for manufacturing hexagonal silicon crystal
US12054849B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/66
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for manufacturing hexagonal Si crystal includes: a reaction tube; a mixed source part placed on one side in the reaction tube, for receiving mixed source of silicon, aluminum, and gallium which are in a solid state; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the mixed source part; a substrate mounting part placed on the other side in the reaction tube, for mounting a first substrate, wherein the first substrate is disposed such that a crystal growth surface of the first substrate faces downwards; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the substrate mounting part; and a heater for heating the reaction tube. The heater heats the reaction tube in a temperature range of 1100-1300° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.