Thin-film crystalline structure with surfaces having selected plane orientations
US12057147B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Sep 15, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.