Preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method
US12057199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Dec 13, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG16C20/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A preparation method of conductive gallium oxide based on deep learning and vertical Bridgman growth method. The prediction method includes: obtaining a preparation data of the conductive gallium oxide single crystal, the preparation data includes a seed crystal data, an environmental data, a control data and a raw material data, and the raw material data includes a doping type data and a conductive doping concentration; preprocessing the preparation data to obtain a preprocessed preparation data; inputting the preprocessed preparation data into a trained neural network model, and obtaining a predicted property data corresponding to the conductive gallium oxide single crystal through the trained neural network model, the predicted property data includes a predicted carrier concentration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.