Semiconductor device and methods of manufacturing the same
US12057351B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2022 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Dec 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.