Measurement pattern and method for measuring overlay shift of bonded wafers
US12057353B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2021 |
| Grant date | Aug 6, 2024 |
| Priority date | — |
| Expiry date | Feb 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A measurement pattern for monitoring overlay shift of bonded wafers includes a top wafer pattern and a bottom wafer pattern. The top wafer pattern includes a first portion with a width Wx1 measured along a first axis. The bottom wafer pattern includes a first part with a width Wx2 measured along the first axis, wherein the first portion of the top wafer pattern and the first part of the bottom wafer pattern are separated by a target distance Dx, and wherein the measurement pattern satisfies the following measurement formulas: Tx>Dx−Sx; Tx<Dx−Sx+Wx2;Tx>Sx; Tx<Dx−Sx+Wx1;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.